Proceedings of the 9th Conference on Solid State Devices, Tokyo, 1977.

  • 364 Pages
  • 2.42 MB
  • 3915 Downloads
  • English
by
Japanese Journal of Applied Physics , Tokyo
SeriesJapanese journal of applied physics -- Vol.17, supplement 17-1
ContributionsO yo Butsurigakkai.
The Physical Object
Pagination[x],364p.
ID Numbers
Open LibraryOL14592968M

Get this from a library.

Download Proceedings of the 9th Conference on Solid State Devices, Tokyo, 1977. FB2

Proceedings of the 9th Conference on Solid State Devices, Tokyo, Conference on Solid State Devices. - The Tokyo Chamber of Commerce and Industry, Tokyo, Japan. Search Criteria; Search Filters. Beginning insome vols. have, within parentheses, International, accompanied by the year, as part of the name, e.g., 5th Conference ( International) on Solid State Devices, distinguishing them from those of a domestic scope.

This book presents 18 carefully selected papers from the ninth edition of the International Conference on Soft Computing and Pattern Recognition (SoCPaR ), which was held in Marrakesh, Morocco from December 11 to 13, This book presents the proceedings of the 9th IFToMM International Conference on Rotor Dynamics.

This conference is a premier global event that brings together specialists from the university and industry sectors worldwide in order to promote the exchange of knowledge, ideas, and information on the latest developments and applied technologies in the dynamics of rotating : Springer International Publishing.

A clear valency electron controllability with substitutional impurity doping in the hydrogenated amorphous silicon carbide has been found. The amorphous silicon carbide is produced by the plasma decomposition of [SiH4(1−X)+CH4(X)] with the dopant gas of a B2H6 or PH3 system.

Electrical and optical properties of doped amorphous SiC films are briefly demonstrated. Utilizing this a‐SiC:H as a. Conference on Solid State Devices. Schedule - Venue The Tokyo Chamber of Commerce and Industry, Tokyo, Japan International Conference on Solid State Devices.

Schedule Sep 1, - Sep 3,   The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions.

Metal-ferroelectric-metal capacitors containing Gd:HfO 2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence. proceedings of the japan-u.s. workshop p on plasma material interaction/high heat flux data needs for the next step ignition and steady state devices-- Call Number: TKP72 Nagoya, Japan Ozawa, M.

Iwase, and A. Toriumi, Extended Abstracts of the 20th Conference on Solid State Devices and Materials (Business Center for Academic Societies, Tokyo, ), p. Google Scholar 5. A series of experimental investigations on optical and optoelectronic properties of methane‐ and ethylene‐based a‐SiC:H films has been made.

The chemical bonding structure of two kinds of a‐ SiC:H films has also been explored from infrared (IR) absorption structural analysis. An experimental verification for the wide gap window material in the amorphous silicon solar cell is shown on. Growth of SiC on off‐oriented 6H‐SiC{} substrates was performed between and °C.

Homoepitaxial growth of 6H‐SiC was achieved at temperatures as low as °C, utilizing step‐flow growth. Twinned crystalline 3C‐SiC was grown at °C; this result can be ascribed to suppressed surface migration of adsorbed Si species at the lower temperature, and to the occurrence of.

Proceedings of the 9th International Conference on Atomic Spectroscopy and 22nd Colloquium Spectroscopicum Internationale, Tokyo, Japan, 4–8 September Tokyo, Japan, 4–8 September Book • Inductively coupled Ar plasmas are simple and efficient devices for transforming liquid and solid aerosols, vapors, and gases at.

Book Solid State Ionics: Proceedings of the 14th Asian Conference on Solid State Ionics (ACSSI ). Suntola (Invited) Atomic Layer Epitaxy, 16th, International Conference on Solid State Devices and Materials, Kobe, Japan, / Proc.

of the 16th Int. Conf. on Solid State Devices and Materials, Kobe, p. Editor(s): Joaquim Filipe and Leszek Maciaszek. Sponsored by INSTICC (the Institute for Systems and Technologies of Information, Control and Communication) and published by SCITEPRESS (Science and Technology Publications, Lda), this book contains proceedings of the 9th International Conference on Evaluation of Novel Software Approaches to Software Engineering (ENASE ).

It’s main focus Format: Paperback. We report p-channel metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) which can operate at a voltage as low as V using Pt/SrBi 2 Ta 2 O 9 /Pt/SrTa 2 O 6 /SiON/Si structures.

It is shown that the use of the saturated P–E hysteresis loop is effective to improve the data retention time. To utilize the saturated P–E loop, MFMIS-FETs with a large S M.

IOP Conference Series Read open access proceedings from science conferences worldwide. Books. Publishing Support. Login. Reset your password. If you have a user account, you will need to reset your password the next time you login. Eto, T. Hirai and E. Maruyama Proc. 9th Conf. Solid State Devices, TokyoJpn.

Appl. Phys. A non-volatile semiconductor memory device includes a gate insulating film which has a relatively thin portion in the vicinity of one of the source and drain regions at which p-n junction breakdown is performed for carrier injection.

Cheemalavagu, S., Korkmaz, P., and Palem, K.

Details Proceedings of the 9th Conference on Solid State Devices, Tokyo, 1977. PDF

Ultra low-energy computing via probabilistic algorithms and devices: CMOS device primitives and the energy-probability relationship. In Proceedings of the International Conference on Solid State Devices and Materials (Tokyo, Japan), Google Scholar.

In: Proceedings, 9th international conference on soil mechanics and foundation engineering, Tokyo, Japan, 2, pp – Google Scholar Jafari MK, Shafiee A, Razmkhah A () Dynamic properties of the fine grained soils in south of Tehran.

Proceedings of the NINTH United States - Japan Conference on Composite Materials Edited by HirOShi Fukuda, Science University of Tokyo Takashi Ishikawa, National Aerospace Laboratory YaSUO KogO, Science University of Tokyo July 3 and 4, Toray Human Resources Development Center, Mishima, Shizuoka, Japan Co-Organized by.

Proceedings, Ninth Internat Workshop, Madison, Wisconsin, USA, July AIP Conference Proceedings, Vol F S Porter, D McCammon, M Galeazzi & C K Stahle (Editors). Book Search tips Selecting this option will search all publications across the Scitation platform Selecting K.

Suzuki, S. Okudaira, and S. Nishimatsu, Extended Abstracts of the 18th ( International) Conference on Solid State Devices and Materials, Tokyo,pp.

– Proceedings of the Symp. Dry Process, Tokyo,p. Tokyo: Publication Office, Business Center for Academic Society Japan, International Conference on Solid State Devices and Materials Frequency Annual Vol/date range 15th ()- Note Proceedings of the Conference on Solid State Devices. Browse related items.

Get this from a library. Proceedings of the 8th Conference ( International) on Solid State Devices, Tokyo, International Conference on Solid State Devices and Materials. Sep 9, - University of Tokyo. Search Criteria; Search Filters. Get this from a library. Proceedings of the 10th Conference on Solid State Devices, Tokyo, D.

Nair, N. Mohapatra, S. Mahapatra and S.

Description Proceedings of the 9th Conference on Solid State Devices, Tokyo, 1977. EPUB

Shukuri, “The Impact of Technology Parameters and Scaling on the Programming Performance and Drain Disturb in CHISEL Flash EEPROMs”, Proceedings, International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, p, The 9th International Conference on Unconventional Computation, UCwas organized under the auspices of EATCS and Academia Europaea, by the University of Tokyo (Tokyo, Japan), and the Center for Discrete Mathematics and Theoretical Computer Science (Auckland, New Zealand).

It was held in. With its 50th annual conference being held inSSDM is one of the most reputable international conferences regarding science and technology in devices and materials. SSDM covers a wide spectrum of topics related to solid state devices and materials.Proceedings of the 12th conference on solid state devices, Tokyo, [Tokyo]: [Publication Office, Japanese Journal of Applied Physics], [] (OCoLC)Greetings!!

It is our great pleasure to welcome you on behalf of the Global Congress and Expo on Solid State Devices and Materials(Solid State Devices and Materials ) and to invite you to attend the conference to be hosted in Miami, USA, AugustThe conference will bring together leading academic scientists, professors, doctors, researchers and scholars in the domain of.